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van der Waals ferromagnets have gained significant interest due to their unique ability to provide magnetic response even at the level of a few monolayers. Particularly in combination with 2D semiconductors, such as the transition metal dichalcogenide WSe 2 , one can create heterostructures that feature unique magneto-optical response in the exciton emission through the magnetic proximity effect. Here we use 0D quantum emitters in WSe 2 to probe for the ferromagnetic response in heterostructures with Fe 3 GT and Fe 5 GT ferromagnets through an all-optical read-out technique that does not require electrodes. The spectrally narrow spin-doublet of the WSe 2 quantum emitters allowed to fully resolve the hysteretic magneto-response in the exciton emission, revealing the characteristic signature of both ferro- and antiferromagnetic proximity coupling that originates from the interplay among Fe 3 GT or Fe 5 GT, a thin surface oxide, and the spin doublets of the quantum emitters. Our work highlights the utility of 0D quantum emitters for probing interface magnetic dipoles in vdW heterostructures with high precision. The observed hysteretic magneto response in the exciton emission of quantum emitters adds further new degrees of freedom for spin and g -factor manipulation of quantum states. 

Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by $\sim <\#comment/>{40}^{\circ <\#comment/>}$as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform.